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代码块测试
Electrode {
Name= c Voltage=1.1
}
#define _Vc_ 8.0
#setdep @node|eqbm@
File {
*-Input
Grid= "@tdr@"
Parameter="@parameter@"
*-Output
Current= "@plot@"
Plot= "@tdrdat@"
Output= "@log@"
PMIPath= "."
NewtonPlot= "n@node@_np_%d_%d_des.tdr"
}
Electrode {
{ Name= "b" Voltage= 0 }
{ Name= "e" Voltage= 0 }
{ Name= "c" Voltage= 0 }
{ Name= "s" Voltage= 0 }
}
Physics(MaterialInterface= "SiliconCarbide/Oxide") {
Traps (FixedCharge Conc=8e11
)
Recombination(
SurfaceSRH
) *this can improve convergence
}
Physics {
*AreaFactor= 100
Traps(
(Acceptor Conc=4e14 level fromCondBand EnergyMid=0.67 eXsection=2.0e-14 hXsection=3.5e-14 SFactor="DeepLevels")
)
Temperature= 300
Fermi
Mobility(HighFieldSaturation
DopingDependence
IncompleteIonization
Enormal(IALMob)
*Enormal
)
EffectiveIntrinsicDensity(SlotBoom NoFermi)
Recombination(
SRH(
DopingDep TempDep)
Auger
Band2Band(Model= Schenk)
) *this can improve convergence
IncompleteIonization(
Model(pmi_incomplete("AlDoping NitrogenDoping"))
*pmi_incomplete("NitrogenDoping"))
*Model()
)
*Hydrodynamic( eTemperature )
}
Plot {
*- Doping and mole fraction profiles
Doping DonorConcentration AcceptorConcentration
AlDoping NitrogenDoping
*xMoleFraction
*NitrogenConcentration NitrogenActiveConcentration
*NitrogenConcentration_split1 NitrogenActiveConcentration_split1 NitrogenPlusConcentration_split1
*NitrogenConcentration_split2 NitrogenActiveConcentration_split2 NitrogenPlusConcentration_split2
*AluminumConcentration AluminumActiveConcentration
DonorPlusConcentration AccepMinusConcentration
*- Band structure
BandGap BandGapNarrowing ElectronAffinity
ConductionBandEnergy ValenceBandEnergy
eQuasiFermiEnergy hQuasiFermiEnergy
* eQuantumPotential hQuantumPotential
*- Carrier Densities:
eDensity hDensity
EffectiveIntrinsicDensity IntrinsicDensity
eEquilibriumDensity hEquilibriumDensity
*- Fields, Potentials and Charge distributions
ElectricField/Vector
Potential
SpaceCharge
*- Currents
Current/Vector eCurrent/Vector hCurrent/Vector
CurrentPotential * for visualizing current lines
eMobility hMobility
eVelocity hVelocity
*- Generation/Recombination
SRHRecombination AugerRecombination TotalRecombination SurfaceRecombination Band2Band RadiativeRecombination
eLifeTime hLifeTime
DeepLevels
eTrappedCharge
hTrappedCharge
TotalTrapConcentration
eDiffusivityMobility
hDiffusivityMobility
eTemperature
}
Math {
Extrapolate
ExtendedPrecision(80)
Digits= 8
RHSmin= 1e-15
RHSMax=1e70
RHSfactor=1e120
NotDamped=20
Method=ILS(set=11)
ILSrc= "
set (11) {
// User-defined set that has worked well for SiC simulations
iterative(gmres(100), tolrel=1e-10, tolunprec=1e-4, tolabs=0, maxit=200);
preconditioning(ilut(1.5e-6,-1), right);
ordering(symmetric=nd, nonsymmetric=mpsilst);
options(compact=yes, linscale=0, refineresidual=60, verbose=0);
};
set (12) {
iterative(gmres(150), tolrel=1e-9, tolunprec=1e-4, tolabs=0, maxit=600);
preconditioning(ilut(1e-8,-1), left);
ordering(symmetric=nd, nonsymmetric=mpsilst);
options(compact=yes, linscale=0, refineresidual=5, verbose=0);
};
"
RelErrcontrol
ExitOnFailure
Iterations= 12
ElementEdgeCurrent
ErrRef(electron)= 1e-4
ErrRef(hole)= 1e-4
CDensityMin=1e-30
NumberOfThreads=6
Wallclock
CNormPrint
NewtonPlot(Error MinError Residual)
}
Solve {
Load (FilePrefix= "n@node|eqbm@_eqbm")
Quasistationary (
InitialStep= 1e-3 Increment= 1.45
MinStep= 1e-7 MaxStep= 0.02
Goal { Name="b" Voltage= 3.50 }
Goal { Name="c" Voltage= 3.50 }
Plot {Range = (0.2 1) Intervals=4}
){
Coupled {
Poisson Electron Hole *eTemperature
# eQuantumPotential hQuantumPotential
# eTemperature hTemperature Temperature
# Contact Circuit
}
# Plot (
# FilePrefix = "pn-IV" When(Contact="b" voltage=1.2) )
}
* Base and Collector ramp
}
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邮件成功了,肚老师,你好,很高兴认识你🤝
Belly老师好
大佬,我想问一下,您这个SiC是怎么做mc仿真的呢?我在弄GaN的mc仿真的时候,总是提示我要加上GaV 和NV 这两个粒子才能继续运行,可是这两个不是Ga和N的缺陷吗?为什么需要额外添加呢?
你可以提供一下你的代码,和error log
我大概已经搞清楚了,原先的步骤基本不变,最主要的问题在于KMC下面的Ga 这个文件夹,其中的参数一定要符合之前的定义才不会报错
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